Work

Impact of low growth temperature on hole concentration in polarization-doped AlGaN on AlN

Year: 2026

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0323044

Authors: Teppei Takehisa, Sena Miura, Hibiki Muto, Haruto Hirota, Kenta Takase, Hisanori Ishiguro, Satoshi Kamiyama, Motoaki Iwaya, Yoshiki Saito, Hiroshi Miwa, Tetsuya Takeuchi

Institutions: Meijo University, Toyoda Gosei (Japan)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Ministry of the Environment, Government of Japan, Japan Society for the Promotion of Science

Award: Departure from conductivity control with impurity doping in widegap semiconductors

OpenAlex ID: W7166643253

FWCI: 2.451

Cites: 31

Cited by: 1

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