Accelerated Formation of CsPbI 3 through Controlled Amidation of Intermediate Phases
Year: 2026
Type: article
Abstract: ABSTRACT The all‐inorganic metal halide perovskite CsPbI 3 is a promising photovoltaic absorber owing to its thermal stability and suitable bandgap for tandem applications. The most common approach to depositing CsPbI 3 from solution is based on the use of dimethylammonium iodide (DMAI); however, removing DMAI during crystallization is challenging, as it introduces residues that can lead to higher defect densities and trigger degradation. Here, we introduce a reaction‐guided crystallization strategy based on 2,2,2‐trifluoroethyl trifluoroacetate (TFTF), which undergoes a rapid ester‐amine amidation reaction with DMAI during annealing. By converting DMAI into highly volatile products, the TFTF reaction drives a smooth, additive residue‐free transition to γ‐CsPbI 3 and produces pinhole‐free films with low defect densities. Devices fabricated using this strategy deliver an open‐circuit voltage (V OC ) of 1.20 V and a champion efficiency of 20.8%, along with markedly improved operational stability. This intermediate‐management approach provides a practical, chemically defined pathway for directing CsPbI 3 crystallization and advancing high‐performance inorganic iodide perovskite photovoltaics.
Source: Advanced Energy Materials
DOI: 10.1002/aenm.71174
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $5,790
Awards: G2444390938, G279613021, G3781458612, G79915897
OpenAlex ID: W7166660820
