Simulation Study of High Breakdown Voltage GaN Current Aperture Vertical Electron Transistor With Graded AlGaN Buffer Layer for Power Switching Applications
Year: 2026
Type: article
Source: physica status solidi (a)
DOI: 10.1002/pssa.70419
Authors: Li‐E Cai, Zhi‐Yu Ma, Yi‐Fei Chen, Xiang‐Yu Liu, Chuan‐Tao Sun, Da Feng, Xiao‐bin Li, Rong‐sheng Zheng, Zai‐jun Cheng, Ji‐yan Zhang, Fei‐bing Xiong
Institution: Xiamen University of Technology
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
Award: G6999010469
OpenAlex ID: W7166861813