Work

Photoluminescence from a - and m -plane GaN:Be,O

Year: 2026

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/5.0325063

Authors: M. A. Reshchikov, K. Sierakowski, R. Jakiela, M. Fijalkowski, T. Sochacki, M. Bockowski

Institutions: Virginia Commonwealth University, North Carolina State University, Institute of High Pressure Physics, Polish Academy of Sciences, Institute of Physics

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Science Foundation, Narodowe Centrum Badań i Rozwoju

Awards: Innovative technology for fabricating semi-insulating gallium nitride (GaN) substrates - on the way to p-type substrates, Collaborative Research: Co-doping of ultra/wide-bandgap III-nitride semiconductors for achieving conductive p-type

OpenAlex ID: W7167018248

FWCI:

Cites: 26

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