Through-silicon via etch uniformity enhancement and aspect-ratio influence on etch rate and profile
Year: 2026
Type: article
DOI: 10.1116/6.0005567
Institutions: Hanyang University, IMEC
Language: English
Topic: 3D IC and TSV technologies
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Funder: National NanoFab Center
Award: G8840051105
OpenAlex ID: W7167035588
