Suppression of Hydrogen Incorporation by Substrate Bias in NH 3 ‐Free ICP‐CVD SiN x Thin Film Deposition
Year: 2026
Type: article
Source: Plasma Processes and Polymers
DOI: 10.1002/ppap.70217
Institutions: Sungkyunkwan University, Wonik IPS (South Korea)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Award: G7333398235
OpenAlex ID: W7167036688