Work

Tuning the Structural Phase and Charge Transport in Ge-Doped Ag₂Te Thin Films Prepared by Thermal Evaporation

Year: 2026
Type: article
Abstract: This study examines the effect of the addition of germanium (Ge) on the compositional, morphological, and electrical properties of silver telluride (Ag2Te) thin films obtained using vacuum thermal evaporation technology. After deposition, the prepared membranes were subjected to a systematic annealing process at a temperature of 150°C to stabilize the monoclinic phase. X-ray diffraction analysis (XRD) confirmed the formation of a high-purity monoclinic structure with a characteristic stress in the crystal lattice caused by the introduction of germanium. The morphological properties of FE-SEM and AFM showed a significant improvement in surface uniformity and grain cohesion in saturated samples. Electrical measurements based on the Hall effect showed a fundamental improvement in charge transfer properties; in particular, a sample saturated with 2% germanium (Ge) demonstrated exceptional carrier mobility of 10.6 × 103 cm2/V.s and electrical conductivity of 9.80 (Ω.cm)-1. In addition, measurements of the Seebeck Effect in the temperature range from 295 to 365 K confirmed the conductivity of the P-type of all samples, since the values of the Seebeck coefficient(S) for germanium-saturated membranes ranged from 128 to 145 µV/K. A significant jump in the Seebeck response was observed at a temperature of 354 K for a sample saturated with 4% germanium, indicating improved carrier scattering mechanisms. These results suggest that precise Ge alloying combined with controlled heat treatment provides a reliable strategy for the development of highly efficient Ag2Te p-type thin films for advanced thermoelectric and electronic applications.
Language: English
Open Access status: hybrid
OpenAlex ID: W7167417456
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Cites: 5
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Related to: 10