Work

Electron escape probability in high-efficiency photocathodes measured by reverse-injection photovoltage

Year: 2026

Type: preprint

Abstract: The characterization of electron transfer through the emitting surface is of crucial importance for optimizing existing and developing new photocathodes. Here we propose and develop a method for the direct determination of the electron escape probability in high-efficiency semiconductor photocathodes. The proposed method is based on the variations in the surface photovoltage upon the injection of emitted photoelectrons back into a photocathode (``reverse injection"), which is induced by the polarity reversal of the external electric field. We demonstrate the method on \textit{p}-GaN(Cs,O) photocathodes with negative effective electron affinity by measuring the evolution of photoemission quantum efficiency upon the reverse injection of emitted electrons.

Source: arXiv (Cornell University)

DOI: 10.48550/arxiv.2607.18420

Authors: Rozhkov, S. A., Kustov, D. A., Bakin, V. V., Khoroshilov, V. S., Alperovich, V. L., Tereshchenko, O. E., Scheibler, H. E.

Institutions: Russian Academy of Sciences, Novosibirsk State University, Siberian Branch of the Russian Academy of Sciences, Institute of Semiconductor Physics

Language: English

Topic: Photocathodes and Microchannel Plates

Subfield: Instrumentation

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

Funder: Russian Science Foundation

Award: G6246640489

OpenAlex ID: W7170046958

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