Sensor Quality Control and annealing studies of HGCAL silicon sensors
Year: 2026
Type: article
Abstract: We summarise Sensor Quality Control (SQC) results of non-irradiated silicon sensors for the CMS HGCAL detector, as well as the first detailed annealing campaign with a wafer-scale 120 µm (Epitaxial) sensor exposed to 2 × 10$^{15}$ n$_{eq}$/cm$^2$ at the Rhode Island Nuclear Science Center (RINSC). For the non-irradiated sensors, we present an overview of the QC workflow developed for HGCAL, including automated handling of vendor data, validation of electrical measurements, and cross-checking of wafer-level characteristics. The study investigates, for the first time, the isothermal annealing behaviour at 60 °C after annealing periods ranging from 10 to 5000 minutes. Hamburg-model parameters for effective doping concentration changes with annealing time, extracted from full-sensor data, are presented. The post-irradiation behaviour of sensors with hot regions in the pre-irradiation leakage current measurements, as well as epitaxial sensors with stacking faults in individual cells, is also investigated.
Source: KITopen
Authors: CMS HGCAL group, Dincer, Gizem Gul
Language: English
Subfield: Nuclear and High Energy Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W7170054029
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