Work

hν-MacEtch of Al-rich AlGaN: Enabling plasma-free processing in the ultra-wide-bandgap regime

Year: 2026

Type: article

Source: Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

DOI: 10.1116/6.0005575

Authors: Xihang Wu, Yuyao Wang, Gavin Latham, Aadil Waseem, Xiuling Li

Institutions: The University of Texas at Austin, Texas Materials Institute

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Science Foundation, Army Research Office

Awards: G2351915072, Collaborative Research: FuSe: Heterogeneous Integration of III-Nitride and Boron Arsenide for Enhanced Thermal and Electronic Performance

OpenAlex ID: W7170054556

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Cites: 28

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