Work

Integration of LASER Diodes Emitting at Eight Different Wavelengths from Blue to Infrared on a 4H-SiC-Based Optical Integration Platform

Year: 2026

Type: article

Abstract: We demonstrate an integrated eight-wavelength high-power laser source on a 4H-silicon carbide (SiC)-based optical integration platform. Eight discrete Fabry–Perot laser diodes emitting at 445 nm, 637 nm, 789 nm, 806 nm, 846 nm, 978 nm, 1316 nm, and 1552 nm are integrated on a single SiC chip, each delivering ≥100 mW continuous-wave output power. A complete fabrication process is developed, including lift-off metallization (Ni/Ti/Pt/Au), surface hydrophilic activation bonding, and multi-step blade dicing to form SiC waveguides with a width of 500 μm and a thickness defined by the ~510 μm dicing depth, matching the output aperture of the multimode laser diodes. The resulting waveguides exhibit a facet misorientation of <1° and an approximate facet mean surface roughness of ~2 nm. The laser diodes are directly butted against the waveguide facets for edge coupling, and fixed using In52Sn48 solder bonding with pulse temperature control. Under controlled temperature, all eight channels operate stably with measured peak wavelengths matching the design targets. This work provides a scalable and practical solution for multi-wavelength, high-power on-chip light source integration on the SiC platform, addressing critical thermal and integration challenges for dense wavelength division multiplexing.

Source: Materials

DOI: 10.3390/ma19143145