Interplay Between Oxidation State, Intervalence Charge Transfer Transitions and Electronic Conductivity in a Series of Ru‐Based Metal–Organic Frameworks
Year: 2026
Type: article
Abstract: ABSTRACT Multinuclear Ru complexes connected by multitopic ligands were central in the development of electron transfer theories. Infinite coordination frameworks constructed from these motifs could inherit their unique electron delocalization and spectroscopic properties, allowing to systematically explore their correlation in the solid‐state. However, controlling the crystallization of Ru‐based frameworks continues to present a major hurdle. Herein, four nitrogen‐based heterocyclic ligands of different lengths were used to construct a series of metal–organic frameworks (MOFs) with the general formula [Ru(L) 2 Cl 2 ], L = pyrazine (pz), 2,6‐naphthyridine (naph), 4,4′‐bipyridine (bipy), and 1,4‐di(4‐pyridyl)‐benzene (bpbn). Structural analysis revealed two‐dimensional square grid connectivity with the ligand length governing layer packing and interpenetration. The existence of electronic delocalization through the framework backbones was confirmed using electrochemical and spectroscopic techniques. Mixed‐valent states of Ru‐MOFs were generated by controlled chemical oxidation using tris(4‐bromophenyl)ammoniumyl hexachloroantimonate. The resultant samples featured intervalence charge transfer (IVCT) bands, which were dependent on the oxidation state and were accompanied by 4‐orders‐of‐magnitude enhancement of conductivity. The mixed‐valent states of Ru‐naph and Ru‐bipy exhibited the highest conductivities, reaching 2.35 × 10 −5 and 5.91 × 10 −6 S/cm, respectively. Interrogation of these frameworks offered valuable insights into the interplay between the IVCT transitions and the electronic conductivity.
Source: Small
DOI: 10.1002/smll.74630
Language: English
Subfield: Inorganic Chemistry
Field: Chemistry
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $5,790
Awards: Construction of anisotropic MOFs using external perturbations, イオン性MOFを基盤とした高分解能・広範囲分子構造解析法の創出, Controlling guest orientation in the pore by external perturbation, Q-bitを目指したスピンを可視化する基盤としてのMOF創生とスピンデバイス応用, Elucidation of resistance change memory mechanism using redox-active pi-stacks inside MOFs, G6442224289, G8455643121
OpenAlex ID: W7170612573
