Work

Enhanced Performance of β ‐Ga 2 O 3 /GaN Heterojunction UV Photodetector via Introducing an Amorphous GaON Nucleation Layer in the Reverse Substitution Growth

Year: 2026

Type: article

Source: Advanced Optical Materials

DOI: 10.1002/adom.71497

Authors: Zijin Lu, Jiale Zhang, Yuefei Wang, Yurui Han, Jinghua Teng, Aidong Shen, Bingsheng Li, Yichun Liu

Institutions: Northeast Normal University, Agency for Science, Technology and Research, Institute of Materials Research and Engineering, City College of New York

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Research Foundation Singapore, National Natural Science Foundation of China

Awards: G1293535609, G3154617163, G7385186889, G8567071373

OpenAlex ID: W7171069429

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Cites: 60

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