Work

Research Progress on Thermoelectric and Optoelectronic Properties of Cu2Se Thin Films

Year: 2026

Type: article

Abstract: Copper selenide (Cu2Se), as a typical p-type narrow bandgap semiconductor, has garnered significant attention in the fields of thermoelectrics and optoelectronics due to its inherent low thermal conductivity, high Seebeck coefficient, low cost, and environmental friendliness. Compared with bulk materials, Cu2Se thin films exhibit unique advantages in microdevice integration and flexible applications, holding great potential for applications in flexible thermoelectric generators, solar cells, and photodetectors. This article systematically reviews the research progress of Cu2Se thin films, focusing on key preparation parameters such as growth temperature, annealing conditions, copper/selenium element ratio, and substrate type, and elucidates their regulation of film microstructure, crystal phase structure, and thermoelectric/optoelectronic properties. It delves into the mechanisms of doping strategies such as carrier concentration regulation, band engineering, and defect modification, clarifying the synergistic optimization effects of different doping elements on conductivity, Seebeck coefficient, and thermal conductivity. The article summarizes the current application status of Cu2Se thin films, points out existing challenges such as poor process reproducibility and insufficient thermal stability, and anticipates future research directions such as multi-parameter synergistic optimization and heterojunction design, providing a systematic reference for the development and practical application of high-performance Cu2Se-based functional thin films.

Source: Coatings

DOI: 10.3390/coatings16080888