Work

Surface passivation of HfO2 by silane coupling agents for ultra‑high selectivity etching of Si3N4/SiO2/HfO2 stacks in phosphoric acid

Year: 2026

Type: article

Source: Journal of Alloys and Compounds

DOI: 10.1016/j.jallcom.2026.190142

Authors: Mingzhu Yan, Lianlian Li, Kun Yang, Jiaxin Yao, Hang Zhang, Yanyi Pan, Zhongrui Wang, Meihe Zhang, Zhongshan Xie, Yingze Ren, Qingzhu Zhang, Huaxiang Yin, Jun Luo

Institutions: Chinese Academy of Sciences, Institute of Microelectronics, University of Chinese Academy of Sciences

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

Funder: Key Technologies Research and Development Program

OpenAlex ID: W7171808411

FWCI:

Cites: 38

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Related to: 10