Work

Microscopic impact of isolated and clustered threading dislocations on GaN-on-GaN Schottky diode performance

Year: 2026

Type: article

Source: Nanotechnology

DOI: 10.1088/1361-6528/ae93c1

Authors: Zakariae M’Qaddem, Vishwajeet Maurya, Névine Rochat, Gwénolé Jacopin, Blend Mohamad, Matthew Charles, Julien Buckley, Hala El Rammouz, Yvon Cordier, Łukasz Borowik

Institutions: Université Grenoble Alpes, GREMAN, Matériaux, Microélectronique, Acoustique, Nanotechnologies, Institut Néel, Université Côte d'Azur, Communauté d'universités et d'établissements Université Côte d'Azur

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Agence Nationale de la Recherche

OpenAlex ID: W7172275499

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Cites: 59

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