Work

Optimized HZO/Al2O3 gate stack enables thermally stable β-Ga2O3 ferroelectric field-effect transistors with an enhanced memory window

Year: 2026

Type: article

Source: Device

DOI: 10.1016/j.device.2026.101251

Authors: Seungyun Lee, Jaewook Lee, Sanghyun Moon, Seokjin Ko, Seongyun Yang, Min Hyuk Park, Jihyun Kim

Institutions: Seoul National University, Institute of Engineering Research

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Ministry of Trade, Industry and Energy, Ministry of Science and ICT, South Korea, Defense Acquisition Program Administration

Awards: G2325657313, G2572957395, G6953466561

OpenAlex ID: W7172385726

FWCI:

Cites: 37

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Related to: 10