Performance optimization of black phosphorus vertical junctionless FET via van der Waals overlap engineering for high-density logic technologies
Year: 2026
Type: article
Abstract: Two-dimensional materials have gained significant attention as potential candidates for ultra-scaled electronic devices due to their excellent electrostatic control and reduced short-channel effects. Among them, van der Waals (vdW) heterostructures provide distinct advantages by eliminating lattice mismatch constraints, enabling high-quality interfaces and introducing an inherent current-control barrier. This work presents a simulation-based analysis of a Black Phosphorus Vertical Junctionless Field-Effect Transistor (BP-VJLFET) for performance optimization. The proposed device is analyzed for various gate lengths with varying vdW overlap positions—near source end, at channel centre, and near drain end—using first-principles quantum transport simulations. The results reveal that the 12 nm channel device incorporating vdW overlap at the channel centre exhibits superior electrostatic integrity, accompanied by enhanced static and dynamic performance with a reduction in subthreshold swing to 68 mV/dec and OFF current to 4.5 × 10⁻² μA/μm for High-Performance (HP) applications and 1.13 × 10⁻⁴ μA/μm for High-Density (HD) while a high ON current of 1130μA/μm with a high calculated ON/OFF current ratio of 10 7 achieved for high-density technologies while a high ON current of 1130μA/μm with a high calculated ON/OFF current ratio of 10 7 achieved for high-density technologies. These improvements are primarily attributed to the suppression of tunnelling induced degradation. It is further observed that the proposed BP VJLFET exhibits superior performance compared to its BP lateral JLFET counterpart, highlighting its effectiveness in achieving improved device characteristics. Furthermore, the BP VJLFET meets the performance targets specified in the IRDS 2028 node. These findings not only establish 2D material-based VJLFETs as a viable and scalable solution for future nanoscale electronic systems, but also underscore the opportunity for systematic performance optimization via engineered combinations of 2D material heterostructures.
Source: Next Materials
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $1,280
OpenAlex ID: W7202167979