Work

Van der Waals epitaxy of Bi2Te3 as a buffer layer: A Pathway to high structural quality of CdTe growth on glass

Year: 2026

Type: article

Abstract: This work demonstrates a cost-effective technique for growing high-quality CdTe films on glass substrates using Bi 2 Te 3 as a buffer layer. Atomic force microscopy reveals that Bi 2 Te 3 follows the spiral growth mode with well-ordered and smooth triangular pyramidal morphologies, while CdTe exhibits higher roughness due to the Volmer-Weber growth mode. Cross-sectional transmission electron microscopy confirms sharp interfaces and highly crystalline Bi 2 Te 3 and CdTe(111) layers. High-resolution X-ray diffraction shows well-oriented growth for Bi 2 Te 3 and CdTe(111) on a glass substrate. Reciprocal space mapping reveals the presence of a pronounced broadening, characteristic of a high degree of mosaicity expected for this category of materials. A control sample with a thin film of CdTe grown directly on the glass yields polycrystalline films with Debye-Scherrer rings, underscoring the critical role of the Bi 2 Te 3 as a buffer layer. This scalable approach achieves epitaxial-like CdTe atop low-cost glasses, with direct applications in solar cells with Bi 2 Te 3 acting as a buffer and an ohmic contact. The technique bridges the gap between high-performance epitaxial growth and industrial affordability, offering a new pathway for optoelectronic devices.

Source: Surfaces and Interfaces

DOI: 10.1016/j.surfin.2026.110377