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Halide composition and bilayer band alignment engineering in CsPbX3 quantum dots for enhanced resistive switching performance

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Year: 2026
Type: article
Source: Journal of Alloys and Compounds
DOI: 10.1016/j.jallcom.2026.190436
Authors: Cheng-Hsien Tu, Po-Kai Chiu, Cheng-Hsien Yeh, Hung-Chieh Hsu, Chuan-Feng Shih
Institution: National Cheng Kung University
Language: English

Topic: Advanced Memory and Neural Computing
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences

Open Access status: closed

Funders: Taiwan Semiconductor Research Institute, National Applied Research Laboratories, National Science and Technology Council, National Cheng Kung University
Awards: Development of Low-Dimensional Halide Perovskite on High-Density Energy Storage Devices, Development of Interdisciplinary Industrial Applications of High Entropy Materials in Optoelectronics, Electronics, and Electromagnetics( II ), G6400657853
OpenAlex ID: W7202343518
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Cites: 52
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