Layer-Number-Controlled Symmetry Breaking and Surface-State Transport in Rhombohedral Graphene Multilayers
Year: 2026
Type: article
Abstract: Rhombohedral multilayer graphene hosts layer-polarized flat bands, providing an intriguing platform for correlated and topological states; however, how layer number governs symmetry breaking and surface screening remains elusive. Here, we prepare rhombohedral graphene multilayers and systematically conduct electrical transport measurements. We uncover an unconventional layer dependence of phase transitions: the critical displacement field Dc for the layer-antiferromagnetic-to-semimetal transitions remains nearly constant across tetralayer to hexalayer graphene, whereas Dc for the semimetal-to-layer-polarized-insulator transition increases with layer number, defying unscreened Coulomb interaction models. In hexalayer graphene, surface-state-dominated transport emerges with Landau levels and resistive peaks predominantly controlled by adjacent gates, revealing strong interlayer screening. High magnetic fields further reveal valley-layer-locked Landau levels and dissipative states associated with interlayer backscattering, highlighting the presence of decoupled surface states. Our findings establish the layer number as a key tuning knob for engineering correlated and topological phases in rhombohedral graphene multilayers.
Source: Nano Letters
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
Funders: Ministry of Education, Culture, Sports, Science and Technology, National Natural Science Foundation of China, Shanghai Education Development Foundation, Shanghai Municipal Education Commission, Shanghai Jiao Tong University, National Science and Technology Major Project, Japan Society for the Promotion of Science
OpenAlex ID: W7202401461
