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A Variability-Aware Compact Memristor Model for HfO 2 -based 1T1R ReRAM Devices

Year: 2026

Type: conference-paper

DOI: 10.1109/smacd70206.2026.11647838

Authors: Khang Phuoc Nguyen, Richard Schroedter, Vasileios Ntinas, Emilio Perez -Bosch Quesada, Eduardo Perez, Christian Wenger, Ronald Tetzlaff

Institutions: Technische Universität Dresden, Aalborg University, Leibniz Institute for High Performance Microelectronics

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W7203606412

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Cites: 15

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