Work

Preparation of a Ta2O5–SiO2 composite bilayer using electron beam evaporation for the surface passivation of In0.83Ga0.17As PIN photodetectors

Year: 2026

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0345391

Authors: Tao Zhao, Liang Ding, Ruoyu Xie, Lingze Yao, Mengqi Yang, Dongwei Jiang, Hongyue Hao, Guowei Wang, Yingqiang Xu, Chengao Yang, Donghai Wu, Haiqiao Ni, Chuanbo Li, Zhichuan Niu

Institutions: Minzu University of China, Chinese Academy of Sciences, Institute of Semiconductors, Beijing University of Technology, University of Chinese Academy of Sciences

Language: English

Topic: Advanced Semiconductor Detectors and Materials

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Chinese Academy of Sciences, Ministry of Science and Technology of the People's Republic of China

Awards: G3697265971, G5795055248

OpenAlex ID: W7203620636

FWCI:

Cites: 55

Cited by:

Related to: