Work

Evolution of implantation-induced defects in silicon-on-insulator during rapid thermal annealing

Year: 2026

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0345718

Authors: Jingjun Ding, Chenyu Shi, Yun Liu, Yongwei Chang, Zhongying Xue, Xing Wei

Institutions: Chinese Academy of Sciences, Shanghai Institute of Microsystem and Information Technology, University of Chinese Academy of Sciences

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Awards: G295075973, G6595111662

OpenAlex ID: W7203668533

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Cites: 34

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