Work

Numerical simulation of interconnect temperature regimes under thermal shock

Year: 2026

Type: article

Abstract: Due to the constant reduction in the size of interconnects (based on Al, Cu, etc.) in microelectronic structures, the associated thermal load is constantly increasing. Therefore, it is important to study the heating dynamics of interconnect in pulsed modes. In this work, the temperature modes of operation of an Al-Si binary structure were simulated using the finite element method. The results of numerical modeling of thermal behavior of Al-Si structures were compared with experimental data obtained at various pulse energies (Wτ = 0.5–5.5 J) and duration up to 500 µs. Comparison showed that discrepancy between experimental results and numerical modeling results exceeded 10% over entire range of pulse energy.

Source: Discover Mechanical Engineering

DOI: 10.1007/s44245-026-00343-3

Authors: Arkady A. Skvortsov, Vladimir K. Nikolaev, Zamir F. Khudayarov, Pavel A. Skvortsov, DenisL. Dorozhkov, Aleksei D. Krylov

Institutions: Moscow Polytechnic University, Russian Academy of Sciences

Language: English

Topic: Copper Interconnects and Reliability

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $1,390

Funder: Ministry of Science and Higher Education of the Russian Federation