Work

Optically writable atomic vapor memory as a substrate for optical reservoir computing

Year: 2026

Type: article

Abstract: We present an optical random access memory (ORAM) based on warm cesium (Cs) atomic vapor and demonstrate its operation as the physical substrate of a reservoir computer. Information is stored in the hyperfine population distribution of a Cs ensemble via optical pumping and retrieved through differential probe absorption. Spatial multiplexing via acousto-optic deflection provides eight addressable memory rails able to store up to 3.9 bits of information per rail. Employing this platform as a temporally multiplexed reservoir, we achieve a kernel rank (KR =8.8 ± 0.4), and a minimum bit error rate of 0.02 ± 0.01 on the Exclusive-or (XOR) benchmark. We find the limited memory lifetime constrains the achievable temporal depth, encouraging further research into fast addressable memories. This constitutes the first demonstration of a free-space, optically writable atomic RAM as a substrate in an optical reservoir computing system.

Source: Optics Express

DOI: 10.1364/oe.612547

Authors: Elizabeth Robertson, Mingwei Yang, Lina Jaurigue, Guillermo Gallego, Kathy Lüdge, Janik Wolters

Institutions: Technische Universität Berlin, Technische Universität Ilmenau, Einstein Center Digital Future

Language: English

Topic: Neural Networks and Reservoir Computing

Subfield: Artificial Intelligence

Field: Computer Science

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $2,270

Funder: Deutsche Forschungsgemeinschaft