Work

Highly Oriented and Continuous Epitaxial 2D Tellurium on Violet Phosphorus With Transistor–Memory Functionality

Year: 2026

Type: article

Source: Advanced Functional Materials

DOI: 10.1002/adfm.77872

Authors: Qingyuan He, Dan‐Dong Wang, Qinglin Yuan, Rui Wang, Nan Si, Yi Han, Yanming Wang, Siyu Liu

Institution: Shanghai Jiao Tong University

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: Natural Science Foundation of Shanghai, National Natural Science Foundation of China

Awards: G1179630879, G2796760462, G6185777027, G7416219573, G7583682180

OpenAlex ID: W7203819313

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Cites: 59

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