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Amorphous Erbium Oxide (Er2O3) Memristors with Highly Linear Weight Updates for Artificial Synapses

Year: 2026

Type: article

Source: ACS Applied Electronic Materials

DOI: 10.1021/acsaelm.6c01165

Authors: Mrinal Malhotra, Mani Shankar Yadav, Brajesh Rawat, Viswanath Balakrishnan

Institutions: Indian Institute of Technology Mandi, Indian Institute of Technology Ropar

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Science and Engineering Research Board

Awards: G5461045049, G7581696910

OpenAlex ID: W7203833509

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Cites: 33

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