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Radiation-Induced Charge Trapping Effect in BST/AlGaN/GaN Transistor: Gamma-Ray Dosimeter

Year: 2026

Type: article

Source: ACS Applied Electronic Materials

DOI: 10.1021/acsaelm.6c01298

Authors: Vikas Pandey, Vishal Gupta, Chaitanya B. Auti, Naresh Jingar, Pradeep Kumar, Satyajit Sahu, Ankur Gupta, Sudhiranjan Tripathy, Surendra Singh Barala, Mahesh Kumar

Institutions: Indian Institute of Technology Jodhpur, Defence Research and Development Organisation, Indian Institute of Technology Mandi, Agency for Science, Technology and Research

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Defence Research and Development Organisation, Ministry of Education, India

Awards: G4487558259, G7697491676

OpenAlex ID: W7203837857

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Cites: 44

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