Work

Thermal Management of AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistor by AlN Buffer Engineering for Smart Power Chip Technologies

Year: 2026

Type: article

Source: physica status solidi (a)

DOI: 10.1002/pssa.70474

Authors: Nilesh Kumar Jaiswal, Thomas Ebel, Samaneh Sharbati

Institution: University of Southern Denmark

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

OpenAlex ID: W7203890526

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Cites: 48

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