Comparative Study of Gate Work Function Effects in AlGaN/GaN HEMTs with AlGaN and InGaN Back Barriers
Year: 2026
Type: article
Source: Semiconductors
Authors: P. Eswari, S. Mary Praveena, P. Gowtham
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W7203904223