Modelling the Impact of Asymmetric Channel Doping on Electric Field Distribution and Performance of DG MOSFETs
Year: 2026
Type: article
Source: Semiconductors
Institutions: University of Mosul, Ninevah University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W7203912585
