Year: 2026
Type: article
Abstract: ABSTRACT Existing MOS‐only passive memristor emulators commonly rely on auxiliary MOSFET channels that conduct and switch between the on and off states, introducing channel‐current and switching‐dynamics constraints. This paper proposes a voltage‐controlled GHz‐level MOS‐only memristor emulator (i.e., VNGME). VNGME consists of three MOSFETs without explicit diodes, external passive elements, or power supplies, and its assistant MOSFET channels remain off, thereby avoiding auxiliary‐channel conduction and channel‐state transitions. It operates up to 10 GHz and occupies an area of 10.66 m 2 in the TSMC 65‐nm process. Under a 3‐V, 1‐GHz excitation, VNGME consumes 32.05 W excluding the main‐MOSFET channel power. Furthermore, VNGME's curve is tunable through external voltage inputs. Finally, VNGME is verified with CD4007. The voltage‐controlled oscillator circuit based on the proposed VNGME is presented, which can achieve stepless frequency modulation from 85.885 to 634.1 kHz via controlling VNGME.
DOI: 10.1002/cta.70584
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W7203918906