Interplay between Barrier Inhomogeneity and Interface States in Pt/n-GaN Schottky Barrier Diodes
Year: 2026
Type: article
Source: MATERIALS TRANSACTIONS
Author: Hogyoung Kim
Institution: Seoul National University of Science and Technology
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W7204125612
