Work

Interfacial control for temperature-driven hysteresis crossover in MoS2 ionotronic field-effect transistors for memory application

Year: 2026

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/5.0345591

Authors: Smruti Ranjan Senapaty, Ashis Kumar Panigrahi, Sameer Kumar Mallik, Babulu Pradhan, Satyaprakash Sahoo

Institutions: Homi Bhabha National Institute, Institute of Physics, Bhubaneshwar

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W7204128453

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Cites: 64

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