Work

Dielectric encapsulation strategy for monolithically stacked MoS2/WSe2 complementary FETs with enhanced threshold voltage control

Year: 2026

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0339765

Authors: Weichen Xiao, Haoyue Guo, Tian Tan, Yida Li, Xuewei Feng

Institutions: Shanghai Jiao Tong University, Southern University of Science and Technology

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Science and Technology Commission of Shanghai Municipality, Guangdong Science and Technology Department

Awards: G1887944454, G2164053760, G7390165155, G8527341870

OpenAlex ID: W7204142093

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Cites: 9

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