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Defect engineering in Czochralski silicon through tin-doping: A perspective from tin-vacancy-oxygen interactions

Year: 2026

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/5.0344234

Authors: Qunlin Nie, Hao Chen, Defan Wu, Ruokai Wu, Anchen Tang, Tong Zhao, Deren Yang, Xiangyang Ma

Institution: Zhejiang University

Language: English

Topic: Silicon and Solar Cell Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G287522004

OpenAlex ID: W7204196835

FWCI:

Cites: 47

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