Work

Influence of the Epitaxial Growth Conditions of the Active Region on the Performance of Far‐Ultraviolet‐C Light‐Emitting Diodes

Year: 2026

Type: article

Abstract: Far‐ultraviolet‐C (far‐UVC) light‐emitting diodes (LEDs) emitting at emission wavelengths of 226 or 233 nm with active regions epitaxially grown under different conditions are compared regarding their emission power, operation voltage, and lifetime. A variation in the V/III ratio at the same growth rate was found to have no impact on the LED performance. However, a decrease in growth temperature from 1060 to 1020 °C increases the emission power by around 40%. Furthermore, a decrease in growth rate from 0.080 to 0.014 nm/s increases the emission power by about 50%. At the same time, the L70 lifetime increases by a factor of 3.4. A reduction of the Si doping concentration in the inner quantum well barriers from 4 × 10 18 to 2 × 10 18 cm −3 increases the emission power by more than 40% without affecting the lifetime of the far‐UVC LEDs. Finally, based on these optimizations, 226 nm LEDs with an L70 lifetime above 250 h and an initial emission power of more than 0.4 mW were realized.

Source: physica status solidi (a)

DOI: 10.1002/pssa.70503