Work

Determination of band offsets at the interfaces of NiO and Cr2O3 with InAlN

Year: 2026

Type: article

Source: Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

DOI: 10.1116/6.0005657

Authors: Abdulfatai A. Faro, Hsiao-Hsuan Wan, Katharina V. Loske, Venkateswarlu Gaddam, Jerry Wayne Johnson, Travis J. Anderson, Fan Ren

Institution: University of Florida

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Defense Threat Reduction Agency

Award: G772299097

OpenAlex ID: W7204554052

FWCI:

Cites: 46

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