Year: 2026
Type: preprint
Abstract: Resistive memory technologies offer a compelling advantage for in-memory computing. However, realizing a device architecture that simultaneously achieves high computational precision, efficiency, and density has remained elusive due to inherent trade-offs among these performance metrics. Here, we introduce a compact phase-change memory device architecture that combines an ultra-confined active switching volume for enhanced electro-thermal efficiency with a non-insulating thin film that suppresses temporal conductance fluctuations. We analytically model and back-end integrate these devices into crossbar arrays. Even with conventional, undoped phase-change materials, the device architecture enables a computational precision approaching 6 bits, low conductance values below 50 μS with an adequate conductance window, and a viable pathway toward sub-100 μA programming currents under nominal operating voltages.
Source: Research Square
Institutions: IBM Research - Zurich, IBM (United States)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W7204877010