(111)-Textured p-Type PbTe Films Grown on Muscovite Mica with High Room-Temperature Hole Mobility
Year: 2026
Type: article
Abstract: AIVBVI semiconductors, particularly lead chalcogenides, remain key materials for mid-wave infrared (MWIR) photodetection due to their narrow bandgap and exceptional carrier transport properties. However, the realization of high-quality p-type PbTe thin films, suitable for p–n junction devices, remains a technological challenge. In this work, we report the fabrication of high-mobility p-type PbTe thin films grown on muscovite mica by electron beam-assisted physical vapor deposition. The films were derived from a Te-rich Pb0.999Te1.001 ingot, enabling controlled acceptor formation via excess tellurium. Structural characterization reveals growth with strong (111) texture, large grain size, and low surface roughness. Comprehensive electrical measurements in the range of 80–300 K show a record room-temperature hole mobility of 876 cm2/V·s, achieved under optimized fabrication conditions. This figure approaches values typical for epitaxial n-type PbTe, indicating low scattering and high crystallinity. These results establish an effective route for producing strongly (111)-textured p-type PbTe films with high room-temperature hole mobility through optimized deposition and post-deposition annealing.
Source: Applied Sciences
DOI: 10.3390/app16178577
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,896
OpenAlex ID: W7204880021