Work

Fast-neutron irradiation response of β-Ga2O3 Schottky barrier diodes on sapphire substrate

Year: 2026

Type: article

Source: Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

DOI: 10.1116/6.0005604

Authors: Saleh Ahmed Khan, Ahmed Ibreljic, Sourav Sarker, Stephen Margiotta, Anhar Bhuiyan

Institution: University of Massachusetts Lowell

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Science Foundation, Air Force Research Laboratory

Award: Collaborative Research: Radiation-Tolerant and Thermally Managed High-Voltage Gallium Oxide Power Diodes for High-Power Space Electronics

OpenAlex ID: W7204889439

FWCI: 1.028

Cites: 68

Cited by: 1

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