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Characterization and modeling of forward current conduction in 4H-SiC PiN diodes based on device simulation analysis

Year: 2026

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/5.0350131

Authors: Satoshi Asada, Koichi Murata, Tsubasa Shiono, Naoto Ishibashi, Yuichiro Mabuchi, Hidekazu Tsuchida

Institutions: Central Research Institute of Electric Power Industry, Resonac (Japan)

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: New Energy and Industrial Technology Development Organization

Award: G1774117831

OpenAlex ID: W7204926242

FWCI:

Cites: 41

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