Work

Electric field control of SrVO3 double quantum well

Year: 2026

Type: article

Abstract: Field-effect transistors are widely used to control carrier density in a channel of a semiconductor by a gate voltage. Mott transistors employing strongly correlated electron systems as a channel are particularly intriguing due to their switching mechanism being cooperative phase transitions. In contrast to conventional approach of modulating carrier density or filling in a Mott insulator, we propose an alternative approach of tuning effective bandwidth. We employ SrVO3 double quantum well (DQW) channel, where metal–insulator transition is induced by gate-controlling the tunneling probability of the localized V 3d electrons between two QWs. In contrast to conventional unipolar accumulation/depletion responses in single QW channels, DQW exhibits conductance suppression in both of positive and negative gate voltages. The observed switching behavior can be ascribed to the misalignment of quantized energy levels, suppressing the resonant tunneling effect and enhancing electron correlations.

Source: APL Materials

DOI: 10.1063/5.0312058

Authors: N. Takahara, K. S. Takahashi, Y. Tokura, M. Kawasaki

Institutions: RIKEN Center for Emergent Matter Science, The University of Tokyo, Kanazawa University

Language: English

Topic: Electronic and Structural Properties of Oxides

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $2,200

Funder: Japan Society for the Promotion of Science