Work

Tailoring thermal stability and crystallization behavior in GeTe through arsenic incorporation for electronic memories

Year: 2026

Type: article

Source: Materials Science in Semiconductor Processing

DOI: 10.1016/j.mssp.2026.111130

Authors: Rajkumar Shanajaoba Singh, N.K. Mubaris, Vinod E. Madhavan

Institution: National Institute of Technology Calicut

Language: English

Topic: Phase-change materials and chalcogenides

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funder: Science and Engineering Research Board

Award: G1054544334

OpenAlex ID: W7204948140

FWCI:

Cites: 34

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