Wafer-level characterization of industrial grade Si-based qubit devices.
Year: 2023
Type: conference-paper
Abstract: Efforts in improving the quality and number of solid-state spin qubits within a single device are currently hindered by the lack of large-scale characterization tools. Here, we present a characterization methodology for bi-linear quantum-dot array structures using transistor-like metrics measured at both 300K and 1K, at the wafer-level. The quantum-dot measurements at 1K are crucial to obtain specific information about the spin-qubit confinement and provide meaningful feedbacks to the process integration. With this large-scale characterization, we study the correlations between (i) 300K and 1K transistor-like metrics, and (ii) 1K transistor-like and quantum-dot properties. We discuss the correlations and how they can speed up the characterization at the wafer scale.
Source: HAL
Institutions: Institut Néel, Commissariat à l'Énergie Atomique et aux Énergies Alternatives, CEA Grenoble, Laboratoire d'Électronique des Technologies de l'Information, Leibniz Institute for Solid State and Materials Research, Institut de Recherche Interdisciplinaire de Grenoble, Spintronique et Technologie des Composants, University of Milan
Language: English
Subfield: Artificial Intelligence
Field: Computer Science
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W7205814474