Work

DFT investigation of the effect of CO adsorption sites on the structural, electronic and optical properties of Ge-doped Si quantum dots

Year: 2026

Type: article

Source: International Journal of Modern Physics B

DOI: 10.1142/s021797922650267x

Authors: Nguyen Phuong Duy Anh, Nguyen Thi Huynh Nga, Tran Minh Tien

Institution: Thu Dau Mot University

Language: English

Topic: Silicon Nanostructures and Photoluminescence

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W7208784920

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Cites: 45

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