Work

Capacitance of Undoped Thin-Film Diodes

Year: 2026

Type: preprint

Abstract: The capacitance of thin-film diodes based on undoped semiconductors are dominated by injected charge carriers rather than doping-induced carriers. However, an analytical framework of the capacitance in these devices has remained elusive. Here, we derive an analytical description of the capacitance, fully accounting for injected charge carrier and electrode charge effects. Based on these findings, a method to extract the built-in voltage in these devices is presented. The theoretical framework is substantiated numerically by drift-diffusion simulations and experimentally on organic solar cells.

Source: arXiv (Cornell University)

DOI: 10.48550/arxiv.2609.08047

Authors: Sandberg, Oskar J., Nyman, Mathias, Zeiske, Stefan, Dahlstrom, Staffan, Benduhn, Johannes, Armin, Ardalan

Institutions: Åbo Akademi University, Northwestern University, Deutsches Zentrum für Astrophysik, Dresden Integrated Center for Applied Physics and Photonic Materials, Swansea University, Technische Universität Dresden

Language: English

Topic: Organic Electronics and Photovoltaics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W7212047267

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