Work

Compact Model for Uniaxial Strain-Induced Threshold Voltage Shift in High-k/Metal Gate Nanoscale Bulk MOSFETs

Year: 2026

Type: article

Source: Russian Microelectronics

DOI: 10.1134/s1063739726600044

Author: Yashu Swami

Institutions: Indian Institute of Technology Ropar, Manav Rachna International Institute of Research and Studies

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W7212075365

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Cites: 19

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Related to: 10