Year: 2026
Type: preprint
Abstract: In two-dimensional crystals, electrostatic gating can modulate the charge carrier density, thereby tuning their electrical properties. In magnetic materials such as CrSBr, this approach can also enable direct electrical control of magnetoresistance. Non-volatile gating is particularly attractive since it allows the carrier density to be maintained at a desired level without the need for a continuous gate bias, offering significant advantages for technological applications. Here, we demonstrate a simple device architecture in which a solution-processed ferroelectric P(VDF-TrFE) layer is integrated directly onto a CrSBr channel, enabling non-volatile control of its magnetoresistance. We investigate the magnetotransport response over a broad temperature range and demonstrate a reproducible and robust gate dependence. Notably, the ferroelectric gate achieves a gating efficiency approximately one order of magnitude higher than that of a conventional SiO$_2$ dielectric, highlighting the potential of ferroelectric gating for electrical control of 2D magnetic materials.
Source: arXiv (Cornell University)
Institutions: Budapest University of Technology and Economics, Inha University, CIC nanoGUNE, International Iberian Nanotechnology Laboratory, Ikerbasque, Centre National de la Recherche Scientifique, Institut de Science et d'Ingénierie Supramoléculaires, Université de Strasbourg, Material Physics Center, Hungarian Academy of Sciences
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
Awards: G1175115578, G1561925909, G1575104644, G2262748287, G2369455576, G239150068, G24120701, G2601397997, G294895050, G300979063, G3480869486, G3681454997, G3696923776, G4042783231, G410571670, G425668148, G4291190618, G451917667, G494421491, G5080475149, G513388344, G5195188938, G523076202, G5539308778, G5683704876, G5967599077, G6033112984, G7084143925, G8113637438
OpenAlex ID: W7213148700